PackagePFC ControlStartup CurrentOperating CurrentTypeTO-252(DPAK)DarlingtonNPN1002.0
MJD112 |
RFQ for MJD112 |
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| Technical/Catalog Information | MJD112 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN - Darlington |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Current - Collector (Ic) (Max) | 2A |
| Power - Max | 20W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 8mA, 2A |
| Frequency - Transition | 25MHz |
| Current - Collector Cutoff (Max) | 20A |
| Mounting Type | Surface Mount |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| Packaging | Tube |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MJD112 MJD112 MJD112OS ND MJD112OSND MJD112OS |
| Product | Manufacturers | Pack | D/C | |||||
| MJD112 | - | SOT252 | 05+ |
Typical Application |
| • High DC Current Gain• Built-in a Damper Diode at E-C• Lead Formed for Surface Mount Applications (No Suffix)• Straight Lead (I-PAK, " - I " Suffix)• Electrically Similar to Popular TIP112 |
|
Symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-Base Voltage (IE = 0) |
100 |
V |
|
VCEO |
Collector-Emitter Voltage (IB = 0) |
100 |
V |
|
VEBO |
Emitter-Base Voltage (IC = 0) |
5 |
V |
|
IC |
Collector Current |
2 |
A |
|
Icp |
Collector Peak Current |
4 |
A |
|
IB |
Base Current |
50 |
mA |
|
PC |
Collector Dissipation (TC=25) |
20 |
W |
| Collector Dissipation (Ta=25) |
1.75 |
W | |
|
TJ |
Storage Temperature |
150 |
|
|
Tstg |
Max. Operating Junction Temperature |
-65 to150 |